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NTE123AP Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159)
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Total Device Dissipation (TC = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 1V, IC = 500mA 20 40 80 100 40 - - - - - - - - 300 - V(BR)CEO IC = 1mA, IB = 0, Note 1 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICEV IBEV VCE = 35V, VEB(off) = 0.4V VCE = 35V, VEB(off) = 0.4V 40 60 6 - - - - - - - - - - 0.1 0.1 V V V A A Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter ON Characteristics (Note 1) (Cont'd) Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Small-Signal Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Switching Characteristics Delay Time Rise Time Storage Time Fall Time td tr ts tf VCC = 30V, VEB(off) = 2V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA - - - - - - - - 15 20 225 30 ns ns ns ns fT Ccb Ceb hie hre hfe hoe IC = 20mA, VCE = 10V, f = 100MHz VCB = 5V, IE = 0, f = 100kHz VCB = 0.5V, IC = 0, f = 100kHz IC = 1mA, VCE = 10V, f = 1kHz IC = 1mA, VCE = 10V, f = 1kHz IC = 1mA, VCE = 10V, f = 1kHz IC = 1mA, VCE = 10V, f = 1kHz 250 - - 1.0 0.1 40 1.0 - - - - - - - - 6.5 30 15 8.0 500 30 mhos MHz pF pF k x 10-6 - - 0.75 - - - - - 0.4 0.75 0.95 1.2 V V V V Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
EBC .100 (2.54) .050 (1.27)
.165 (4.2) Max
.105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

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